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Semiconductor Laser Subsystem

Semiconductor Laser Subsystem


The HTOE semiconductor laser subsystems are high power laser diode source and control subsystems which are fully integrated turn-key bench top solutions. These high power subsystems include a high power HTOE laser module, precision high power laser diode current source, temperature controller and cooling plate assembly integrated into a compact enclosure.
Available wavelengths include 6xxnm, 8xxnm, 9xxnm etc.;
Operate in high power constant current or QCW mode;
Over-temperature protection to safeguard the device from thermal damage;
More customer design wavelength, power or functions available on request.

 

Diode Laser Subsystems

Parameter

P1 Laser Subsystem

P2 Laser Subsystem

P3 Laser Subsystem

LOS-BLD-****-5W-C/P

LOS-BLD-****-15W-C/P

LOS-BLD-****-30W-C/P

Center Wavelength

808/980nm

808/980nm

808/980nm

Output Power

0~5W

0~15W

0~30W

Input Voltage

220VAC ± 10%,50 ~ 60Hz

Operation Mode

CW/QCW

CW/QCW

CW/QCW

Modulation Rate

0 ~ 10KHz

0 ~ 5KHz

0 ~ 5KHz

Laser Output Connector

FC/SMA-905

Operation Temperature

5 ~ 35℃

Operation Humidity

5% ~ 85%(No condensation)

Storage Temperature

-10 ~ 60℃

Dimensions

220*210*75

285*250*130

455*365*162

Downloads

pdf

 

* Please contact HTOE to discuss your unique requirements.