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Semiconductor Laser Subsystem
Semiconductor Laser Subsystem
The HTOE semiconductor laser subsystems are high power laser diode source and control subsystems which are fully integrated turn-key bench top solutions. These high power subsystems include a high power HTOE laser module, precision high power laser diode current source, temperature controller and cooling plate assembly integrated into a compact enclosure.Available wavelengths include 6xxnm, 8xxnm, 9xxnm etc.;
Operate in high power constant current or QCW mode;
Over-temperature protection to safeguard the device from thermal damage;
More customer design wavelength, power or functions available on request.

Diode Laser Subsystems
|
Parameter
|
P1 Laser Subsystem
|
P2 Laser Subsystem
|
P3 Laser Subsystem
|
LOS-BLD-****-5W-C/P
|
LOS-BLD-****-15W-C/P
|
LOS-BLD-****-30W-C/P
|
Center Wavelength
|
808/980nm
|
808/980nm
|
808/980nm
|
Output Power
|
0~5W
|
0~15W
|
0~30W
|
Input Voltage
|
220VAC ± 10%,50 ~ 60Hz
|
Operation Mode
|
CW/QCW
|
CW/QCW
|
CW/QCW
|
Modulation Rate
|
0 ~ 10KHz
|
0 ~ 5KHz
|
0 ~ 5KHz
|
Laser Output Connector
|
FC/SMA-905
|
Operation Temperature
|
5 ~ 35℃
|
Operation Humidity
|
5% ~ 85%(No condensation)
|
Storage Temperature
|
-10 ~ 60℃
|
Dimensions
|
220*210*75
|
285*250*130
|
455*365*162
|
Downloads
|
pdf
|
* Please contact HTOE to discuss your unique requirements.